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SIR418DP-T1-GE3

VISHAY SIR418DP-T1-GE3 MOSFET Transistor, N Channel, 40 A, 40 V, 0.00415 ohm, 10 V, 2.4 V

Manufacturer: Vishay Siliconix
Origchip NO: 880-SIR418DP-T1-GE3
Package: PowerPAK® SO-8
Datasheet: PDF
Stock: 780
Description: VISHAY SIR418DP-T1-GE3 MOSFET Transistor, N Channel, 40 A, 40 V, 0.00415 ohm, 10 V, 2.4 V (Kg)

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Parameters
Drain Current-Max (Abs) (ID)	23.5A
Drain-source On Resistance-Max	0.005Ohm
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	70A
Avalanche Energy Rating (Eas)	45 mJ
Nominal Vgs	2.4 V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	R-PDSO-C5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	39W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5W
Case Connection	DRAIN
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2410pF @ 20V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Rise Time	73ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	40A
Threshold Voltage	2.4V
Gate to Source Voltage (Vgs)	20V