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NTD4302T4G

N-Channel Tape & Reel (TR) 10m Ω @ 20A, 10V ±20V 2400pF @ 24V 80nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer: ON Semiconductor
Origchip NO: 1807-NTD4302T4G
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet: -
Stock: 642
Description: N-Channel Tape & Reel (TR) 10m Ω @ 20A, 10V ±20V 2400pF @ 24V 80nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)

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Details

Tags

Parameters
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Factory Lead Time	2 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	8.4A Ta 68A Tc
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Power Dissipation (Max)	1.04W Ta 75W Tc
Turn Off Delay Time	40 ns
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	7.8MOhm
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	30V
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	68A
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	75W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2400pF @ 24V
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Rise Time	15ns
Vgs (Max)	±20V
Continuous Drain Current (ID)	18.5A
Threshold Voltage	1.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	28A
Avalanche Energy Rating (Eas)	722 mJ
Nominal Vgs	1.9 V
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

NTD4302T4G Description

The NTD4302T4G from ON manufacturer is a FETs - Single with Power MOSFET. The device is characterized across a –55°C to +150°C temperature range which makes it suitable for industrial applications. Supplied in an inexpensive TO?252 plastic package for high?volume requirements, this package is readily adaptable for use in automatic insertion equipment.

NTD4302T4G Features

? Ultra Low RDS(on)
? Higher Efficiency Extending Battery Life
? Logic Level Gate Drive
? Diode Exhibits High Speed, Soft Recovery
? Avalanche Energy Specified
? IDSS Specified at Elevated Temperature
? DPAK Mounting Information Provided
? These Devices are Pb?Free and are RoHS Compliant
NTD4302T4G Applications

? DC?DC Converters
? Low Voltage Motor Control
? Power Management in Portable and Battery Powered Products: i.e., Computers, Printers, Cellular and Cordless Telephones, and PCMCIA Cards