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IRFIZ48NPBF

MOSFET N-CH 55V 40A TO220FP

Manufacturer: Infineon Technologies
Origchip NO: 376-IRFIZ48NPBF
Package: TO-220-3 Full Pack
Datasheet: PDF
Stock: 564
Description: MOSFET N-CH 55V 40A TO220FP (Kg)

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Details

Tags

Parameters
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1996
Series	HEXFET®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Current Rating	36A
Number of Elements	1
Power Dissipation-Max	54W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	42W
Case Connection	ISOLATED
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	16m Ω @ 22A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	89nC @ 10V
Rise Time	78ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	48 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	36A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	40A
Drain to Source Breakdown Voltage	55V
Avalanche Energy Rating (Eas)	270 mJ
Recovery Time	140 ns
Nominal Vgs	4 V
Height	9.8mm
Length	10.6172mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free