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2SC5707-E

NPN 150°C TJ 100nA ICBO SILICON TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

Manufacturer: ON Semiconductor
Origchip NO: 1807-2SC5707-E
Package: TO-251-3 Short Leads, IPak, TO-251AA
Datasheet: -
Stock: 45
Description: NPN 150°C TJ 100nA ICBO SILICON TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole (Kg)

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Details

Tags

Parameters
Lifecycle Status	ACTIVE (Last Updated: 9 hours ago)
Factory Lead Time	2 Weeks
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	50V
Number of Elements	1
hFEMin	200
Operating Temperature	150°C TJ
Packaging	Bulk
Published	2001
JESD-609 Code	e6
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin/Bismuth (Sn/Bi)
Max Power Dissipation	1W
Frequency	330MHz
Pin Count	3
Element Configuration	Single
Power Dissipation	1W
Gain Bandwidth Product	330MHz
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	8A
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 500mA 2V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	240mV @ 175mA, 3.5A
Max Breakdown Voltage	50V
Collector Base Voltage (VCBO)	100V
Emitter Base Voltage (VEBO)	6V
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

2SC5707-E Overview

This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 240mV @ 175mA, 3.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A breakdown input voltage of 50V volts can be used.A maximum collector current of 8A volts is possible.